IGN3135L12
S-Band Radar Transistor Operating at 3.1-3.5 GHz
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
3.1 | 3.5 | 12 | 16 | 50 | 3µs, 30% | 46 | Input | PL32A2 |
IGN3135L12 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 12W of peak output power, 46V, and 30% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
