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ILD0912M60
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
ILD0912M60 | 0.96 | 1.215 | 60 | 17 | 48 | 10µs, 10% | 30 | Input & Output | PL44B1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
0.96
1.215
60
17
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
48
10µs, 10%
30
Input & Output
ILD0912M60 is a high power LDMOS transistor designed for the frequency band 0.960 - 1.215 GHz. Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
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