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ILD0912M60

LDMOS Transistor Operating at 60W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
0.96
1.215
60
17
48
10µs, 10%
30
Input & Output
PL44B1
ign0160um12.jpeg

ILD0912M60 is a high power LDMOS transistor designed for the frequency band 0.960 - 1.215 GHz. Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

60W Output Power

100% High Power RF Tested

Class AB Operation

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APPLICATION

L-Band Avionics

EXPORT STATUS

EAR99

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