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ILD1214M60

High Power L-Band Transistor Supplying 60W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
1.2
1.4
60
14
48
300µs, 10%
30
Input & Output
PL44B1
ign0160um12.jpeg

ILD1214M60 is a high power LDMOS transistor designed for the frequency band 1.215 - 1.400 GHz. Operating 3at 300us-10% pulse conditions this LDMOS FET device supplies a minimum of 60W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

Silicon LDMOS FET

Matched to 50-ohms

60W Output Power

100% High Power RF Tested

Class AB Operation

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APPLICATION

L-Band Radar

EXPORT STATUS

EAR99

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