Integra Technologies, Inc. - Manufacturer RF transistors, BIPOLAR, MOSFET, LDMOS, VDMOS RF transistor, Pulsed Radar

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Integra Technologies, Inc. established in 1997, is an ISO 9001:2008 certified manufacturer of state of the art RF power transistors, pallets and high power amplifiers (HPA). These products are based on GaN HEMT and Si LDMOS, VDMOS and Bipolar technologies.

The company operates in three locations: El Segundo, California is the manufacturing/engineering site with 6”/4”wafer fabrication facility for both GaN and Si products, automated assembly and testing; El Dorado Hills, California is the site for advanced product development; Phoenix, Arizona is a Sales and Marketing site.

Integra is the sole source for several Air Traffic Control and Avionics systems. The company, through its domestic/international sales offices and Representation/ Distribution network, provides application-specific products in high volume for Radar, Avionics, Defense Communication, ISM, and ECM applications.

C Band GaN/SiC: IGN5259M80 delivers 80W peak from 5.2 to 5.9 GHz. The device operates @ 36V bias class AB under 300 usec, 10% pulse condition, with 11 dB gain and 50% efficiency.

S Band GaN/SiC: IGN2735M250 delivers 250 W peak from 2.7-3.5 GHz under 300 usec, 10% pulse condition, 36V bias, class AB, 55% efficiency and 10 dB gain.

C Band GaN/SiC: MPAG5259M25 miniaturized 50 Ohm power amplifier delivering 25 W peak from 5.2-5.9 GHz.

L band GaN/SiC: IGN1214M250 RF power transistor delivering 250W peak over 1.2-1.4 GHz with 17 dB gain and over 60% efficiency.

S Band GaN/SiC: IGN2735M30 RF power transistor delivering 30 W peak over 2.7-3.5 GHz.

LDMOS S Band Radar
Integra’s newest development for pulsed S-band radar is the ILD3135M180. It operates at 30V bias, with 11 dB gain and 45% efficiency. Stay tuned for similar devices in different S bands. Sampling now!

LDMOS L Band Radar

ILD1214EL200 delivers 200 peak for 16 msec, 50% dc in the frequency band of 1.2- 1.4 GHz. ILD1214L250 delivers 250W for 1 msec, 20% dc. Both feature all gold metallization for reliability. Sampling now!

LDMOS for Avionics Integra’s newest developments for pulsed Avionics is the ILD1011M550HV. This device and its lower power drivers set a new standard for LDMOS power and ruggedness that can withstand a 20:1 load mismatch at all phase angles! Sampling now!

50V pallets for Avionics & L-Band
Integra continues to add to the list of available pallets, now including application specific devices for Avionics and L-Band Radar. The newest products include an 850W pallet for Mode S-ELM (NGIFF), a 700W pallet for L-Band radar (1.2-1.4 GHz).

Highest Power TACAN Bipolar

IB0912M600 at 600W peak power is the highest power transistor in its class for 960-1215 MHz application. The device features all gold metallization for highest reliability. Sampling now!

Technical papers by Integra are now available for downloading and review. The Technical Papers page is located here: Technical Papers

Integra Technologies is an ISO 9001:2008 certified, global supplier of high power RF and Microwave Transistors and Amplifier Modules to Broadcast, Radar and Avionics equipment manufacturers.

S Band GaN/SiC: IGN2729M400 is the latest GaN based, single ended, RF power transistor delivering over 400W at 300 usec, 10% dc, with 11 dB gain, and 55% min. efficiency. See data sheet in Products. Stay tuned for L Band progress to be announced soon.

Please visit Integra at the 2012 IEEE MTTs conference in Montreal, Canada:

We will be on-site Tue-Thur June 19-21 at Booth #3020. We look forward to seeing you there.