Please visit Integra at the 2013 IEEE MTTs conference in Seattle, WA:
We will be on-site Tue-Thur June 4-6 at Booth #2125. We look forward to seeing you there.
S Band GaN/SiC: IGN2729M500 is the latest GaN based, single ended, RF power transistor delivering over 500W at 300 usec, 10% dc, with 11 dB gain, and 55% min. efficiency.
C Band GaN/SiC: IGN5259M80 delivers 80W peak from 5.2 to 5.9 GHz. The device operates @ 36V bias class AB under 300 usec, 10% pulse condition, with 11 dB gain and 50% efficiency.
S Band GaN/SiC: IGN2735M250 delivers 250 W peak from 2.7-3.5 GHz under 300 usec, 10% pulse condition, 36V bias, class AB, 55% efficiency and 10 dB gain.
C Band GaN/SiC: MPAG5259M25 miniaturized 50 Ohm power amplifier delivering 25 W peak from 5.2-5.9 GHz.
L band GaN/SiC: IGN1214M500 RF power transistor delivering 500W peak over 1.2-1.4 GHz with 17 dB gain and over 60% efficiency.
S Band GaN/SiC: IGN2735M30 RF power transistor delivering 30 W peak over 2.7-3.5 GHz.
ARMMS RF & Microwave Society
LDMOS L Band Radar
ILD1214EL200 delivers 200 peak for 16 msec, 50% dc in the frequency band of 1.2- 1.4 GHz. ILD1214L250 delivers 250W for 1 msec, 20% dc. Both feature all gold metallization for reliability. Sampling now!
LDMOS for Avionics Integra’s newest developments for pulsed Avionics is the ILD1011M1000HV. This device and its lower power drivers set a new standard for LDMOS power and ruggedness that can withstand a 20:1 load mismatch at all phase angles! Sampling now!
50V pallets for Avionics & L-Band
Highest Power TACAN Bipolar
IB0912M600 at 600W peak power is the highest power transistor in its class for 960-1215 MHz application. The device features all gold metallization for highest reliability. Sampling now!
Technical papers by Integra are now available for downloading and review. The Technical Papers page is located here: Technical Papers