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IGN1030S5000
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN1030S5000 | 1.03 | 1.03 | 5000 | 19 | 73 | 32µs, 4%` | 125 | Input | PL124A1 |
Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
1.03
1.03
5000
19
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
73
32µs, 4%`
125
Input
IGN1030S5000 and IGN1030S5000S are high power GaN/SiC RF power transistors that have been designed to suit the unique needs of IFF/SSR avionics systems. Under 32µs, 4% duty cycle pulse conditions, they typically supply 5000 W of peak output power, with 18.5dB of associated gain
and 68% efficiency. They operate from a 125 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
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